contribution to the series resistance. Comparison of pFF and FF is, therefore, a way to evaluate R S -related losses, In this project we develop co-diffusion processes for the fabrication of bifacial p-type PERT solar cells, Reducing costs of solar cells' fabrication by means of introducing novel hydrosilane-free APCVD SiO2 films to be employed e.g. Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. An accurate and robust analysis of the measured curves is essential. The illuminated curve then provides sufficient information to separate two contributions to the series resistance. When, restricting the analysed parameters to the ﬁll factors and, full range ﬁt parameters, no general quantitative rules at all, can be deduced. The fill factor is the ratio of the actual maximum obtainable power to the product of the open circuit voltage and short circuit current. La technique PIII est particulièrement adaptée à la réalisation de jonctions ultra-minces, comparé à l'implantation par faisceaux d'ions. Equation (1), experimentally conﬁrming Fischer’s work. If you are talking in parlance of a solar cell, I think, probably, the term that you are looking for is Fill Factor or FF. of the ongoing manufacturing process. generation, recombination, and the basic equations of photovoltaic Sketch of two sunsVoc curves with and without the influence of the network. nonoptimal fits: residuals around and above the open-circuit voltage It is shown that for an accurate analysis the, character of the series resistance and the network character of the solar cell cannot be neglected. As for J 01 , the low J fit yields the averaged J 02 values. parameters can be found to describe all three curves with. Due to the high currents and, high lateral voltage variations the inﬂuence of the, character cannot be neglected. (C) 2003 American Institute of Physics. Fill factor, open circuit voltage sVocd, short circuit current sJscd,and efï¬ciency of solar cells deposited on SnO2 and ZnO, with and without a germanium layer at the interface. I - V characteristics resulting from an additional The equivalent circuit of the solar cell [6] motive force. wafers, and design, improvements, and device structures are examined. Least square fits of J(V)-curves to the double diode model often result in different parameters for the illuminated and dark characteristics which are not compatible with the JSC-VOC curve, especially for non optimum solar cells in the development stage. A review of the present microscopic contact formation model for flat surfaces is presented. Orthogonal distance regression, based on weighted least-squares ﬁtting [2] is one, possibility to extract model parameters such as, simulations that the distributed character of the series, resistance can cause severe deviations of the model, parameters and misinterpretation of the measurements, when ﬁtting the two-diode model (Equation (1)) to, different types of solar cells produced at Fraunhofer ISE, using industrial processes. In the present work, we analyse the lateral series resistance by means of measurement and simulation for high-performance metal wrap through (HIP-MWT) solar cells. DOI: 10.1002/pip.979, ﬁll factor losses due to the seriesresistance (, is free from losses due to series resista, In the research production line at Fraunhofer ISE the three, ﬁll factors are usually recorded for every cell for, characterisation purposes. Typical fill factors range from 50% to 82%. 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